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2008-02-11 rev. 2.4 page 1 spw11n60s5 cool mos? power transistor v ds 600 v r ds(on) 0.38 ? i d 11 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to247 type package ordering code spw11n60s5 p g -to247 q67040-s4239 marking 11n60s5 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 11 7 a pulsed drain current, t p limited by t j ma x i d p uls 22 avalanche energy, single pulse i d = 5.5 a, v dd = 50 v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 11 a, v dd = 50 v e ar 0.6 avalanche current, repetitive t ar limited by t j ma x i ar 11 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w operating and storage temperature t j , t st g -55... +150 c please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 2 spw11n60s5 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 20 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11a - 700 - gate threshold voltage v gs(th) i d =500 ? , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - - - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a, t j =25c t j =150c - - 0.34 0.92 0.38 - ? gate input resistance r g f =1mhz, open drain - 29 - please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 3 spw11n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =7a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1460 - pf output capacitance c oss - 610 - reverse transfer capacitance c rss - 21 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - pf effective output capacitance, 3) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =11a, r g =6.8 ? - 130 - ns rise time t r - 35 - turn-off delay time t d(off) - 150 225 fall time t f - 20 30 gate charge characteristics gate to source charge q gs v dd =350v, i d =11a - 10.5 - nc gate to drain charge q gd - 24 - gate charge total q g v dd =350v, i d =11a, v gs =0 to 10v - 41.5 54 gate plateau voltage v (plateau) v dd =350v, i d =11a - 8 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 4 spw11n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 22 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 650 1105 ns reverse recovery charge q rr - 7.9 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.015 k/w r th2 0.03 r th3 0.056 r th4 0.197 r th5 0.216 r th6 0.083 thermal capacitance c th1 0.0001878 ws/k c th2 0.0007106 c th3 0.000988 c th4 0.002791 c th5 0.007285 c th6 0.063 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t) please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 5 spw11n60s5 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spw11n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 5 10 15 20 25 a 35 i d 6v 7v 8v 9v 20v 12v 10v please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 6 spw11n60s5 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 a 18 i d 6v 7v 8v 9v 20v 12v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 14 a 18 i d 0 0.5 1 m ? 2 r ds(on) 20v 12v 10v 9v 8v 7v 6v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ? 2.1 spw11n60s5 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v 20 v gs 0 4 8 12 16 20 24 a 32 i d 25 c 150 c please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 7 spw11n60s5 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 65 q gate 0 2 4 6 8 10 12 v 16 spw11n60s5 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spw11n60s5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 8 spw11n60s5 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spw11n60s5 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 9 spw11n60s5 definition of diodes switching characteristics please note the new package dimensions arccording to pcn 2009-134-a
8211 rev. 2.4 pdjh 63:116s5 3 g72 please note the new package dimensions arccording to pcn 2009-134-a
2008-02-11 rev. 2.4 page 11 63:116s5 please note the new package dimensions arccording to pcn 2009-134-a
data sheet erratum pcn 2009-134-a new package outlines to-247 final data sheet erratum rev. 2.0, 2010-02-01 1 new package outlines to-247 assembly capacity extension for coolmostm technology products assembled in lead-free package pg-to247-3 at subcon tractor ase (weihai) inc., chin a (changes are marked in blue . ) figure 1 outlines to-247, dimensions in mm/inches

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